窒化ヒーター
◆ Features of the insulating cover
| Printed Thickness | 10~20 μm |
| Withstand Voltage | ≧ 1000V/25 μm |
| Fining Temp | 800℃ or more |
| Max. Use Temp. | 800℃ or more |
◆ Features of the element
| Printed Thickness | 10~20 μm |
| Withstand Voltage | 35~475 μm |
| Fining Temp | 800℃ or more |
| Max. Use Temp. | up to abour 450℃ |
◆ Features of the the base
| Printed Thickness | ALN (Aluminum Nitride) |
| Withstand Voltage | 170W/m.K(RT) or more |
| Fining Temp | 4.5 x 10-3 |
| Max. Use Temp. | 450 mm dia. or more |
◆ Gas generated during heating
Suited to semicondutor production applications since no NA, Ka Cu or other metails are detected when used at 500℃.
Benefits